Factory Lead Time  

14 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

72A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

157 ns

Power Dissipation (Max)  

150W Tc

Number of Elements  

1

Published  

2001

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

12MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

60V

Peak Reflow Temperature (Cel)  

250

Current Rating  

72A

Time@Peak Reflow Temperature-Max (s)  

30

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Case Connection  

DRAIN

Turn On Delay Time  

7.6 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

12m Ω @ 43A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1985pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

200ns

Vgs (Max)  

±20V

Fall Time (Typ)  

166 ns

Continuous Drain Current (ID)  

72A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

290A

Dual Supply Voltage  

60V

Recovery Time  

100 ns

Nominal Vgs  

4 V

Width  

4.82mm

Length  

10.6426mm

Height  

8.77mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free